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| 2SK1167, 2SK1168 Silicon N-Channel MOS FET Application TO-3P High speed power switching Features * * * * * Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter 2 1 2 1 3 1. Gate 2. Drain (Flange) 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage 2SK1167 Symbol VDSS Ratings 450 Unit V -------------------------------------------------------------------------------------- ---------- 2SK1168 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature VGSS ID ID(pulse)* IDR Pch** Tch Tstg ------ 500 30 15 60 15 100 150 -55 to +150 V A A A W C C -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- * PW 10 s, duty cycle 1 % ** Value at TC = 25 C 2SK1167, 2SK1168 Table 2 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage 2SK1167 Symbol V(BR)DSS Min 450 Typ -- Max -- Unit V Test conditions ID = 10 mA, VGS = 0 -------------------------------------------------------------------------------------- -------- 2SK1168 Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current 2SK1167 V(BR)GSS IGSS IDSS ---- 500 30 -- -- V IG = 100 A, VDS = 0 VGS = 25 V, VDS = 0 VDS = 360 V, VGS = 0 -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -- -- -- -- 10 250 A A -------------------------------------------------------------------------------------- -------- 2SK1168 Gate to source cutoff voltage Static Drain to source on state resistance 2SK1167 VGS(off) RDS(on) 2.0 -- -- |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr 8 -- -- -- -- -- -- -- -- -- 0.25 0.30 13 2050 600 75 30 110 150 70 1.0 3.0 0.36 0.40 -- -- -- -- -- -- -- -- -- S pF pF pF ns ns ns ns V IF = 15 A, VGS = 0 IF = 15 A, VGS = 0, diF/dt = 100 A/s ID = 8 A, VGS = 10 V, RL = 3.75 ID = 8 A, VDS = 10 V * VDS = 10 V, VGS = 0, f = 1 MHz V --------------------- VDS = 400 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 8 A, VGS = 10 V * -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------- 2SK1168 -------------------- -------------------------------------------------------------------------------------- Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time * Pulse Test -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -- 500 -- ns -------------------------------------------------------------------------------------- 2SK1167, 2SK1168 Power vs. Temperature Derating 150 Channel Dissipation Pch (W) 100 30 Drain Current ID (A) 100 Maximum Safe Operation Area 10 0 s 10 D C PW s 10 3 1.0 0.3 Ta= 25C O = 1 10 m s m pe s ra tio n (T (1 Sh C= 50 Operation in this area is limited by RDS (on) 25 ot ) C ) 2SK1168 2SK1167 0 50 100 Case Temperature TC (C) 150 0.1 1 3 10 30 100 300 1,000 Drain to Source Voltage VDS (V) Typical Output Characteristics 20 10 V 6V Drain Current ID (A) Pulse Test 12 5.0 V 20 5.5 V 16 Typical Transfer Characteristics VDS = 20 V Pulse Test 16 Drain Current ID (A) 12 8 4.5 V 4 VGS = 4V 0 4 8 12 20 16 Drain to Source Voltage VDS (V) 8 4 75C -25C TC = 25C 0 2 4 6 8 Gate to Source Voltage VGS (V) 10 2SK1167, 2SK1168 Drain to Source Saturation Voltage vs. Gate to Source Voltage 10 Drain to Source Saturation Voltage VDS (on) (V) Pulse Test 20 A 6 Static Drain to Source on State Resistance RDS(on) () 5 2 1.0 0.5 Static Drain to Source on State Resistance vs. Drain Current Pulse Test 8 VGS = 10 V 4 2 10 A ID = 5 A 0.2 0.1 0.05 1 2 10 20 5 Drain Current ID (A) 15 V 0 4 8 12 16 20 50 100 Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance RDS (on) () 1.0 VGS = 10 V Pulse Test ID = 20 A Forward Transfer Admittance yfs (S) Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance vs. Drain Current 50 20 10 5 VDS = 20 V Pulse Test -25C TC = 25C 75C 0.8 0.6 0.4 5A 0.2 10 A 2 1.0 0.5 0.2 0 -40 0 40 80 120 Case Temperature TC (C) 160 2 0.5 1.0 5 Drain Current ID (A) 10 20 2SK1167, 2SK1168 Body to Drain Diode Reverse Recovery Time 5,000 Reverse Recovery Time trr (ns) 2,000 1,000 500 di/dt = 100 A/s, Ta = 25C VGS = 0 Pulse Test 10,000 Typical Capacitance vs. Drain to Source Voltage VGS = 0 f = 1 MHz Capacitance C (pF) Ciss 1,000 Coss 200 100 50 0.2 100 Crss 10 0.5 1.0 2 5 10 Reverse Drain Current IDR (A) 20 0 10 20 30 40 50 Drain to Source Voltage VDS (V) Dynamic Input Characteristics 500 Drain to Source Voltage VDS (V) VDD = 100 V 400 VDS 300 250 V 400 V VGS 12 16 20 Gate to Source Voltage VGS (V) 1,000 500 Switching Time t (ns) 200 100 50 Switching Characteristics VGS = 10 V, VDD 30 V PW = 2 s, duty < 1% t d (off) tr tf 200 100 VDD = 400 V 250 V 100 V ID = 15 A 8 4 t d (on) 20 10 0.5 0 20 40 60 80 Gate Charge Qg (nc) 0 100 1.0 2 5 10 20 Drain Current ID (A) 50 2SK1167, 2SK1168 Reverse Drain Current vs. Source to Drain Voltage 20 Reverse Drain Current IDR (A) Pulse Test 16 12 8 4 5 V, 10 V VGS = 0, -10 V 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance S (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 D=1 0.5 0.3 0.2 0.1 1.0 TC = 25C 0.1 0.05 0.02 0.01 Pulse 0.03 ot 1Sh 0.01 10 100 1m 10 m Pulse Width PW (s) ch-c (t) = S(t) * ch-c ch-c = 1.25C/W,TC = 25C PDM D = PW T PW T 100 m 1 10 2SK1167, 2SK1168 Switching Time Test Circuit Vin Monitor Wavewforms 90 % Vout Monitor D.U.T RL Vin Vout 10 % 10 % 90 % tr 90 % td (off) 10 % 50 Vin = 10 V . VDD = 30 V . td (on) tf |
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